245 citations · 2.8k across the 71 of their papers we have counts for
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Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces
Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette +7
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic…
Probing the metal-insulator transition of NdNiO3 by electrostatic doping
Junwoo Son, Bharat Jalan, Adam P. Kajdos +3
Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band fil…
A heterojunction modulation-doped Mott transistor
Junwoo Son, Siddharth Rajan, Susanne Stemmer +1
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator…