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Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate
Cui-Zu Chang, Ke He, Min-Hao Liu +6
Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quali…
Evidence for electron-electron interaction in topological insulator thin films
Jian Wang, Ashley M. DaSilva, Cui-Zu Chang +6
We consider in our work high quality single crystal thin films of Bi2Se3, grown by molecular beam epitaxy, both with and without Pb doping. Our ARPES data demonstrate topological s…
Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit
Minhao Liu, Cui-Zu Chang, Zuocheng Zhang +10
We report a transport study of ultrathin Bi2Se3 topological insulators with thickness from one quintuple layer to six quintuple layers grown by molecular beam epitaxy. At low tempe…
Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
Can-Li Song, Yi-Lin Wang, Ye-Ping Jiang +14
Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study…