353 citations · 3.5k across the 52 of their papers we have counts for
52 papers
Inert gas as electronic impurity in semiconductors: The case for active infrared absorption in silicon
Nian-Ke Chen, Yu-Chen Gao, Ji-Hong Zhao +5
Inert (noble gas) elements are extremely inactive to surrounding chemical environment and are frequently employed as protective gas in various semiconductor fabrication processes.…
Enumeration of Moire Patterns of a Hexagonal Twisted Bilayer and Intercalated Transition Metals in Twisted h-BN
Matthew Ciesler, Damien West, Shengbai Zhang
A real-space method using generating integers is used to classify the possible moire patterns for two equal hexagonal lattices. The result is that the rotations that take (n,m) to…
Ultrafast Charge Transfer Enhancement in CdS-MoS2 via Linker Molecule
Matthew Ciesler, Han Wang, Shengbai Zhang +1
Hybrid systems, which take advantage of low material dimensionality, have great potential for designing nanoscale devices. Quantum dots (QDs) -- a 0D nanostructure -- can be combin…
A Universal Description of Workfunction
Zeyu Jiang, Damien West, Shengbai Zhang
At the surfaces of materials, the bulk symmetry of the charge density is broken and electron spill-out into the vacuum region creates a surface dipole. Such spill-out has been hist…
Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal
Mengying Bian, Liang Zhu, Xiao Wang +17
Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional…
Small polarom formation by electron-electron interaction
Yunfan Liang, Min Cai, Lang Peng +4
In a solid, electrons can be scattered both by phonons and other electrons. First proposed by Landau, scattering by phonons can lead to a composite entity called a polaron, in whic…
Polarization at the Nanoscale
Ke Yang, Zeyu Jiang, Duk-Hyun Choe +2
Modern polarization theory yields surface bound charge associated with spontaneous polarization of bulk. However, understanding polarization in nano systems also requires a proper…
Bilayer twisting as a mean to isolate connected flat bands in a Kagome lattice through Wigner crystallization
Jing Wu, Yuee Xie, Mingxing Chen +4
The physics of flat band is novel and rich but difficult to access. In this regard, recently twisting of bilayer van der Waals (vdW)-bounded two-dimensional (2D) materials has attr…
Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
Zhonghai Yu, Xiucheng Wei, Yixiong Zheng +9
Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few yea…
Realization of AlSb in the double layer honeycomb structure: a robust new class of two-dimensional material
Le Qin, Zhi-Hao Zhang, Zeyu Jiang +10
Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we repo…
Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics
Julien Chaste, Imen Hnid, Lama Khalil +8
Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measureme…
Vector Potential and Surface Magnetic Field in Magnetoelectric Antiferromagnetic Materials
Zeyu Jiang, Damien West, Shengbai Zhang
A general formula for the average vector potential of bulk periodic systems is proposed and shown to set the boundary conditions at magnetic interfaces. For antiferromagnetic mater…
Realization of Semiconducting Layered Multiferroic Heterojunctions via Asymmetrical Magnetoelectric Coupling
Baishun Yang, Bin Shao, Jianfeng Wang +3
Two-dimensional (2D) semiconducting multiferroics that can effectively couple magnetic and polarization (P) orders have great interest for both fundamental research and technologic…
Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO
Hui Zhang, Madisen Holbrook, Fei Cheng +7
The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals…
Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics
Xiucheng Wei, Haolei Hui, Samanthe Perera +6
BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Co…
An Environmentally Stable and Lead-Free Chalcogenide Perovskite
Tushar Gupta, Debjit Ghoshal, Anthony Yoshimura +14
Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concer…
Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics
Xiucheng Wei, Haolei Hui, Chuan Zhao +14
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct ban…
Spin-Triplet Excitonic Insulator: The Case of Graphone
Zeyu Jiang, Wenkai Lou, Yu Liu +5
While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional…
Topological carbon materials: a new perspective
Yuanping Chen, Yuee Xie, Xiaohong Yan +2
Carbon has numerous one-dimensional (1D), two-dimensional (2D), and three-dimensional (3D) allotropic structures. The study of carbon materials has been a major focus of material s…
Uncovering vacuum level in infinite solid by real-space potential-unfolding
Duk-Hyun Choe, Damien West, Shengbai Zhang
Although real materials are finite in size, electronic structure theory is built on the assumption of infinitely large solid, which led to a longstanding controversy: where is the…
Understanding the origin of bandgap problem in transition and post-transition metal oxides
Hengxin Tan, Haitao Liu, Yuanchang Li +2
Improving electronic structure calculations for practical and technologically-important materials has been a never-ending pursue. This is especially true for transition and post-tr…
Half Excitonic Insulator: A Single-Spin Bose-Einstein Condensate
Zeyu Jiang, Yuanchang Li, Wenhui Duan +1
First-principles calculations reveal an unusual electronic state (dubbed as half excitonic insulator) in monolayer 1T-MX2 (M = Co, Ni and X = Cl, Br). Its one spin channel has a ma…
Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3
Wenhan Zhang, Damien West, Seng Huat Lee +6
By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the t…
Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes
Yang Li§, Tianmeng Wang§, Han Wang§ +10
InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk t…