77 citations · 260 across the 17 of their papers we have counts for
17 papers
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
A. G. Taboada, A. M. Sánchez, A. M. Beltrán +12
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile…
Bi Incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires
Janusz Sadowski, Anna Kaleta, Serhii Kryvyi +7
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs…
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Pujitha Perla, Anton Faustmann, Sebastian Koelling +11
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can…
Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires
Yunyan Zhang, H. Aruni Fonseka, Hui Yang +5
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emis…
Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO Layer
Fan Cui, Yunyan Zhang, H. Aruni Fonseka +14
Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting sys…
Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation
Pujitha Perla, H. Aruni Fonseka, Patrick Zellekens +10
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor el…
Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys
Xue Xia, Siow Mean Loh, Jacob Viner +8
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconduct…
Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Patrick Zellekens, Russell Deacon, Pujitha Perla +10
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such…
Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…
Enhanced superconductivity in few-layer TaS due to healing by oxygenation
J. Bekaert, E. Khestanova, D. G. Hopkinson +15
When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional materials. Superconductivity is generally…
High yield production of ultrathin fibroid semiconducting nanowire of TaPdSe
Xue Liu, Sheng Liu, Liubov Yu. Antipina +12
Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, m…
Quantum oscillation and unusual protection mechanism of the surface state in nonsymmorphic semimetals
Xue Liu, Chunlei Yue, Sergey V. Erohin +9
In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surfac…
High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire
Hassan Ali, Yunyan Zhang, Jing Tang +13
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form…
Nano-scale Inhomogeneous Superconductivity in Fe(Te1-xSex) Probed by Nanostructure-transport
Chunlei Yue, Jin Hu, Xue Liu +2
Among iron based superconductors, the layered iron chalcogenide Fe(Te1-xSex) is structurally the simplest and has attracted considerable attentions. It has been speculated from bul…
Artefacts in geometric phase analysis of compound materials
Jonathan J. P. Petersa, Richard Beanland, Marin Alexe +4
The geometric phase analysis (GPA) algorithm is known as a robust and straightforward technique that can be used to measure lattice strains in high resolution transmission electron…
Lateral heterojunctions within monolayer semiconductors
Chunming Huang, Sanfeng Wu, Ana M. Sanchez +7
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creat…
High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures
E. A. Chekhovich, K. V. Kavokin, J. Puebla +7
Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Succ…