77 citations · 260 across the 17 of their papers we have counts for
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Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Pujitha Perla, Anton Faustmann, Sebastian Koelling +11
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can…
Thermally-driven formation of Ge quantum dots on self-catalysed thin GaAs nanowires
Yunyan Zhang, H. Aruni Fonseka, Hui Yang +5
Embedding quantum dots (QDs) on nanowire (NW) sidewalls allows the integration of multi-layers of QDs into the active region of radial p-i-n junctions to greatly enhance light emis…
Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO Layer
Fan Cui, Yunyan Zhang, H. Aruni Fonseka +14
Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting sys…
Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys
Xue Xia, Siow Mean Loh, Jacob Viner +8
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconduct…
Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Patrick Zellekens, Russell Deacon, Pujitha Perla +10
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such…
High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire
Hassan Ali, Yunyan Zhang, Jing Tang +13
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form…
Lateral heterojunctions within monolayer semiconductors
Chunming Huang, Sanfeng Wu, Ana M. Sanchez +7
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creat…
High resolution nuclear magnetic resonance spectroscopy of highly-strained quantum dot nanostructures
E. A. Chekhovich, K. V. Kavokin, J. Puebla +7
Much new solid state technology for single-photon sources, detectors, photovoltaics and quantum computation relies on the fabrication of strained semiconductor nanostructures. Succ…