16 citations · 37 across the 9 of their papers we have counts for
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Robust Protection of III-V Nanowires in Water Splitting by a Thin Compact TiO Layer
Fan Cui, Yunyan Zhang, H. Aruni Fonseka +14
Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting sys…
Fully in-situ InAs nanowire Josephson junctions by selective-area growth and shadow evaporation
Pujitha Perla, H. Aruni Fonseka, Patrick Zellekens +10
Josephson junctions based on InAs semiconducting nanowires and Nb superconducting electrodes are fabricated in-situ by a special shadow evaporation scheme for the superconductor el…
Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys
Xue Xia, Siow Mean Loh, Jacob Viner +8
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconduct…
Hard-gap spectroscopy in a self-defined mesoscopic InAs/Al nanowire Josephson junction
Patrick Zellekens, Russell Deacon, Pujitha Perla +10
Superconductor/semiconductor-nanowire hybrid structures can serve as versatile building blocks to realize Majorana circuits or superconducting qubits based on quantized levels such…
Defect-Free Axially-Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement
Yunyan Zhang, Anton V. Velichko, H. Aruni Fonseka +7
Axially-stacked quantum dots (QDs) in nanowires (NWs) have important applications in fabricating nanoscale quantum devices and lasers. Although their performances are very sensitiv…