111 citations · 694 across the 19 of their papers we have counts for
19 papers
Asymmetry-induced resistive switching in Ag-AgS-Ag memristors enabling a simplified atomic-scale memory design
A. Gubicza, D. Zs. Manrique, L. Pósa +4
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity…
From stochastic single atomic switch to nanoscale resistive memory device
A. Geresdi, A. Halbritter, A. Gyenis +2
Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at rea…
Magnetic order induced crystal symmetry lowering in ACrO ferrimagnetic spinels
S. Bordacs, D. Varjas, I. Kezsmarki +6
We demonstrate that the onset of complex spin orders in ACrO spinels with magnetic ACo, Fe and Cu ions lowers the lattice symmetry. This is clearly indicated by the emer…
Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb
A. Geresdi, A. Halbritter, M. Csontos +6
Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagn…
Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites
L. Demkó, I. Kézsmárki, G. Mihály +3
We have studied the bandwidth-temperature-magnetic field phase diagram of RE(0.55)Sr(0.45)MnO(3) colossal magnetoresistance manganites with ferromagnetic metallic (FM) ground state…
Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor
G. Mihaly, M. Csontos, S. Bordacs +5
High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall te…