3 papers
cond-mat.mes-hall2025
An extended low-frequency noise compact model for single-layer graphene FETs including correlated mobility fluctuations effect
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, David Jimenez
Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect…
cond-mat.mes-hall2025
A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Tzu-Jung Huang +3
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This…
cond-mat.mes-hall2025
Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
N. Mavredakis, A. Pacheco-Sanchez, R. Garcia Cortadella +3
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time…