Anthony J. Ardizzi

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physics.app-ph2025

Investigation of Real-Space Transfer Noise in InP Quantum Wells

Jiayin Zhang, Anthony J. Ardizzi, Kieran A. Cleary +1

Indium phosphide (InP) high electron-mobility transistors (HEMTs) are widely used in many fields such as quantum computing because of their unparalleled microwave noise performance…

physics.app-ph2024

Atomic layer etching of SiO $_{2}$ using sequential exposures of Al(CH $_{3}$ ) $_{3}$ and H $_{2}$ /SF $_{6}$ plasma

David Catherall, Azmain Hossain, Austin Minnich

On-chip photonic devices based on SiO $_{2}$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO $_{2}$ microdisk resonators have achie…

Investigation of Real-Space Transfer Noise in InP Quantum Wells

Atomic layer etching of SiO2​ using sequential exposures of Al(CH3​)3​ and H2​/SF6​ plasma

Atomic layer etching of SiO $_{2}$ using sequential exposures of Al(CH $_{3}$ ) $_{3}$ and H $_{2}$ /SF $_{6}$ plasma