collaborators

5 papers

physics.app-ph2025

Investigation of Real-Space Transfer Noise in InP Quantum Wells

Jiayin Zhang, Anthony J. Ardizzi, Kieran A. Cleary +1

Indium phosphide (InP) high electron-mobility transistors (HEMTs) are widely used in many fields such as quantum computing because of their unparalleled microwave noise performance…

physics.ins-det2025

Variable-temperature attenuator calibration method for on-wafer microwave noise characterization of low-noise amplifiers

Anthony J. Ardizzi, Jiayin Zhang, Akim A. Babenko +2

Low-noise cryogenic microwave amplifiers are widely used in applications such as radio astronomy and quantum computing. On-wafer noise characterization of cryogenic low-noise trans…

cond-mat.mtrl-sci2025

Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas

Mete M. Bayrak, Anthony J. Ardizzi, Sadhvikas Addamane +2

The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer…

cond-mat.mtrl-sci2025

Atomic layer etching of niobium nitride using sequential exposures of O and H/SF plasmas

Azmain A. Hossain, Sela Murphy, David S. Catherall +2

Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature () and kinetic inductance. Proces…

cond-mat.mes-hall2024

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H and SF plasmas

Ivy I. Chen, Jennifer Solgaard, Ryoto Sekine +7

Lithium niobate (LiNbO, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart perio…