Anthony J. Ardizzi

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cond-mat.mtrl-sci2025

Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas

Mete M. Bayrak, Anthony J. Ardizzi, Sadhvikas Addamane +2

The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer…

cond-mat.mtrl-sci2025

Atomic layer etching of niobium nitride using sequential exposures of O $_{2}$ and H $_{2}$ /SF $_{6}$ plasmas

Azmain A. Hossain, Sela Murphy, David S. Catherall +2

Niobium nitride (NbN) is a metallic superconductor that is widely used for superconducting electronics due to its high transition temperature ( $T_{c}$ ) and kinetic inductance. Proces…

Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas

Atomic layer etching of niobium nitride using sequential exposures of O2​ and H2​/SF6​ plasmas

Atomic layer etching of niobium nitride using sequential exposures of O $_{2}$ and H $_{2}$ /SF $_{6}$ plasmas