21 citations · 38 across the 3 of their papers we have counts for
Showing 2016 · cs.ARShow all
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cs.AR2016
Understanding and Exploiting Design-Induced Latency Variation in Modern DRAM Chips
Donghyuk Lee, Samira Khan, Lavanya Subramanian +5
Variation has been shown to exist across the cells within a modern DRAM chip. We empirically demonstrate a new form of variation that exists within a real DRAM chip, induced by the…
cs.AR2016
Adaptive-Latency DRAM (AL-DRAM)
Donghyuk Lee, Yoongu Kim, Gennady Pekhimenko +4
This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015. The key goal of AL-DRAM is to exploit the extra margin that is built into the D…