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20152021
most citedTwo-dimensional Janus van der Waals heterojunctions: a review of recent research progresses

5 citations · 6 across the 4 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

9 papers · 1 filter

cond-mat.mtrl-sci2021

Intertwined Ferroelectricity and Topological State in Two-Dimensional Multilayer

Yan Liang, Ning Mao, Ying Dai +3

The intertwined ferroelectricity and band topology will enable the non-volatile control of the topological states, which is of importance for nanoelectrics with low energy costing…

cond-mat.mtrl-sci2020

Prediction of Intrinsic Triferroicity in Two-Dimensional Lattice

Shiying Shena, Yandong Ma, Xilong Xu +3

Intrinsic triferroicity is essential and highly sought for novel device applications, such as high-density multistate data storage. So far, the intrinsic triferroicity has only bee…

cond-mat.mtrl-sci20205 cited

Two-dimensional Janus van der Waals heterojunctions: a review of recent research progresses

Lin Ju, Mei Bie, Xiwei Zhang +2

Two-dimensional Janus van der Waals (vdW) heterojunctions, referring to the junction containing at least one Janus material, are found to exhibit tuneable electronic structures, wi…

cond-mat.mtrl-sci2020

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-FeCl2

Pei Zhaos, Yandong Ma, Hao Wang +3

Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degener…

cond-mat.mtrl-sci2019

Reversible Gas Sensing by Ferroelectric Switch and 2D Molecule Multiferroics in In2Se3 Monolayer

Xiao Tang, Jing Shang, Yuantong Gu +2

Two-dimensional ferroelectrics are important quantum materials which have found novel application in nonvolatile memories, however, the effects of reversible polarization on chemic…

cond-mat.mtrl-sci2019

Multiferroic Decorated Fe2O3 Monolayer Predicted from First Principles

Jing Shang, Chun Li, Aijun Du +5

Two-dimensional (2D) multiferroics exhibit cross-control capacity between magnetic and electric responses in reduced spatial domain, making them well suited for next-generation nan…