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20132026
most citedDoes P-type Ohmic Contact Exist in WSe2-metal Interfaces?

211 citations · 1.5k across the 45 of their papers we have counts for

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28 papers · 1 filter

cond-mat.mtrl-sci2026

Unidirectional magnetoresistance driven by nonequilibrium antiferromagnetic magnons

Xue He, Hans Gløckner Giil, Caiqiong Xu +6

Magnetoresistive effects are typically symmetric under magnetization reversal. However, nonlinear spin transport can give rise to unidirectional magnetoresistance in systems with s…

cond-mat.mtrl-sci2026

Magnetic field-induced non-trivial Lifshitz transition in TaCo2Te2

Suman Kalyan Pradhan, Xiaoming Ma, Jicheng Wang +14

Magnetic-field-driven Lifshitz transitions are typically considered zero-temperature phenomena involving Fermi-surface reconstruction without symmetry breaking. Here, we report an…

cond-mat.mtrl-sci2025

Reconfigurable Room Temperature Exchange Bias through Néel Order Switching in van der Waals Heterostructures

Jicheng Wang, Shilei Ding, Bei Ding +9

Exchange bias effect plays a crucial role in modern magnetic memory technology. Recently, van der Waals magnetic materials have emerged and shown potential in spintronic devices at…

cond-mat.mtrl-sci2025★ 6 cited

Tailoring spin reorientation and magnetic interaction for room-temperature spintronics in Tb-Doped SmFeO3 single crystal

Mingzhu Xue, Xin Li, Shilei Ding +7

Selective doping with different R-site ions in rare-earth perovskite RFeO3 compounds offers an effective way to achieve atomic-scale tuning of the complex exchange interactions. In…

cond-mat.mtrl-sci2025

Colossal magnetoresistance in a quasi-two-dimensional cluster glass semiconductor

Suman Kalyan Pradhan, Weiqi Liu, Jicheng Wang +5

With a surge of interest in spintronics, the manipulation and detection of colossal magnetoresistance in quasi-two-dimensional layered magnetic materials have become a key focus, d…

cond-mat.mtrl-sci2024

Coexistence of large anomalous Hall effect and topological magnetic skyrmions in a Weyl nodal ring ferromagnet Mn5Ge3

Hang Li, Feng Zhou, Bei Ding +8

Topological magnetic materials are expected to show multiple transport responses because of their unusual bulk electronic topology in momentum space and topological spin texture in…

cond-mat.mtrl-sci2024★ 3 cited

Harnessing Interlayer Magnetic Coupling for Efficient, Field-Free Current-Induced Magnetization Switching in a Magnetic Insulator

Leran Wang, Alejandro O. Leon, Wenqing He +9

Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation sp…

cond-mat.mtrl-sci2023

Controlling the 2D magnetism of CrBr by van der Waals stacking engineering

Shiqi Yang, Xiaolong Xu, Bo Han +9

The manipulation of two-dimensional (2D) magnetic order is of significant importance to facilitate future 2D magnets for low-power and high-speed spintronic devices. Van der Waals…

cond-mat.mtrl-sci2023★ 45 cited

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Chao Yun, Haoran Guo, Zhongchong Lin +13

The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their…

cond-mat.mtrl-sci2023★ 28 cited

Harnessing van der Waals CrPS4 and Surface Oxides for non-monotonic pre-set field induced Exchange Bias in Fe3GeTe2

Aravind Puthirath Balan, Aditya Kumar, Tanja Scholz +12

Two-dimensional van der Waals (vdW) heterostructures are an attractive platform for studying exchange bias due to their defect free and atomically flat interfaces. Chromium thiopho…

cond-mat.mtrl-sci2023★ 3 cited

Magnetically-dressed CrSBr exciton-polaritons in ultrastrong coupling regime

Tingting Wang, Dingyang Zhang, Shiqi Yang +7

The strong coupling between photons and matter excitations such as excitons, phonons, and magnons is of central importance in the study of light-matter interactions. Bridging the f…

cond-mat.mtrl-sci2022★ 53 cited

Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in and

Xiaolong Xu, Shiqi Yang, Huan Wang +14

Natural superlattice structures ( = 1, 2,...), in which magnetic layers are separated by nonmagnetic layers,…

cond-mat.mtrl-sci2021

Sliding Ferroelectric Tunnel Junctions

Jie Yang, Jun Zhou, Jing Lu +3

Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 37…

cond-mat.mtrl-sci2021★ 197 cited

Observation of the Orbital Rashba-Edelstein Magnetoresistance

Shilei Ding, Zhongyu Liang, Dongwook Go +12

We report the observation of magnetoresistance (MR) originating from the orbital angular momentum transport (OAM) in a Permalloy (Py) / oxidized Cu (Cu*) heterostructure: the orbit…

cond-mat.mtrl-sci2021★ 16 cited

Magnetic coupling in YFeO/GdFeO heterostructures

Sven Becker, Zengyao Ren, Felix Fuhrmann +8

Ferrimagnetic YFeO (YIG) is the prototypical material for studying magnonic properties due to its exceptionally low damping. By substituting the yttrium with other r…

cond-mat.mtrl-sci2020★ 29 cited

Identifying the origin of the non-monotonic thickness dependence of spin-orbit torques and interfacial Dzyaloshinskii-Moriya interaction in a ferrimagnetic insulator heterostructure

Shilei Ding, Lorenzo Baldrati, Andrew Ross +7

Electrical manipulation of magnetism via spin-orbit torques (SOTs) promises efficient spintronic devices. In systems comprising magnetic insulators and heavy metals, SOTs have star…

cond-mat.mtrl-sci2020★ 25 cited

Influence of Atomic Roughness at The Uncompensated Fe/CoO (111) Interface on Exchange Bias Effect

Rui Wu, Mingzhu Xue, Tuhin Maity +5

The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of sur…

cond-mat.mtrl-sci2019★ 103 cited

Interfacial Dzyaloshinskii-Moriya interaction and chiral magnetic textures in a ferrimagnetic insulator

Shilei Ding, Andrew Ross, Romain Lebrun +9

The interfacial Dzyaloshinskii-Moriya interaction (DMI) in multilayers of heavy metal and ferromagnetic metals enables the stabilization of novel chiral spin structures such as sky…

cond-mat.mtrl-sci2018★ 1 cited

Discovery of Two-Dimensional Multiferroicity in van der Waals CuCrP2S6 Layers

Youfang Lai, Zhigang Song, Yi Wan +6

Multiferroic materials are potential to be applied in novel magnetoelectric devices, for example, high-density non-volatile storage. Last decades, research on multiferroic material…

cond-mat.mtrl-sci2018★ 1 cited

Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6

Zhigang Song, Xiaotian Sun, Jingshan Qi +6

Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum…

cond-mat.mtrl-sci2015★ 211 cited

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Yangyang Wang, Ruoxi Yang, Ruge Quhe +9

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…

cond-mat.mtrl-sci2015★ 51 cited

Silicene Nanomesh

Feng Pan, Yangyang Wang, Kaili Jiang +8

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal tha…

cond-mat.mtrl-sci2014★ 113 cited

Graphdiyne-metal contacts and graphdiyne transistors

Yuanyuan Pan, Yangyang Wang, Lu Wang +9

Graphdiyne is prepared on metal surface, and making devices out of it also inevitably involves contact with metals. Using density functional theory with dispersion correction, we s…

cond-mat.mtrl-sci2014★ 65 cited

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

Yangyang Wang, Zeyuan Ni, Qihang Liu +7

It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (su…