activity
19972026
most citedCharge order driven by Fermi-arc instability in Bi2201

577 citations · 19.3k across the 331 of their papers we have counts for

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Showing 2019Show all

20 papers · 1 filter

cond-mat.supr-con2019★ 9 cited

Proximity effect in [Nb(1.5nm)/Fe(x)]/Nb(50nm) superconducting/ferromagnet heterostructures

Yu. N. Khaydukov, S. Pütter, L. Guasco +5

We have investigated the structural, magnetic and superconducting properties of [Nb(1.5nm)/Fe(x)] superlattices deposited on a thick Nb(50nm) layer. Our investigation showed…

cond-mat.supr-con2019★ 23 cited

Parametrically amplified phase-incoherent superconductivity in YBaCuO

A. von Hoegen, M. Fechner, M. Först +8

The possibility of enhancing desirable functional properties of complex materials by optical driving is motivating a series of studies of their nonlinear terahertz response. In hig…

cond-mat.supr-con2019★ 10 cited

Backfolded acoustic phonons in metal-oxide superlattices

F. Lyzwa, A. Chan, J. Khmaladze +5

We report the observation of low-frequency modes in the Raman spectra of thin-film superlattices of the high-temperature superconductor YBaCuO and various…

cond-mat.mtrl-sci2019★ 1 cited

Magnetic Scattering Chapter

Jeffrey W. Lynn, Bernhard Keimer

The present chapter reviews current neutron and x-ray scattering techniques employed to elucidate the magnetic structures and spin dynamics of magnetic materials. Both techniques p…

cond-mat.supr-con2019★ 14 cited

Electronic and vibrational signatures of ruthenium vacancies in SrRuO thin films

Gideok Kim, Y. Eren Suyolcu, J. Herrero-Martin +12

The synthesis of stoichiometric SrRuO thin films has been a challenge because of the high volatility of ruthenium oxide precursors, which gives rise to ruthenium vacancies…

cond-mat.str-el2019★ 16 cited

Tunable perpendicular exchange bias in oxide heterostructures

Gideok Kim, Yury Khaydukov, Martin Bluschke +9

The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane…