452 citations · 2.2k across the 46 of their papers we have counts for
5 papers · 1 filter
Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC
Tuocheng Cai, Zhenzhao Jia, Baoming Yan +2
We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the…
Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms
Zhenzhao Jia, Baoming Yan, Jingjing Niu +4
Enhancement of the spin-orbit coupling in graphene may lead to various topological phenomena and also find applications in spintronics. Adatom absorption has been proposed as an ef…
All-Metallic Vertical Transistors Based on Stacked Dirac Materials
Yangyang Wang, Zeyuan Ni, Qihang Liu +7
It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (su…
Observation of vacancy-induced suppression of electronic cooling in defected graphene
Qi Han, Yi Chen, Gerui Liu +2
Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect…
Does the Dirac Cone Exist in Silicene on Metal Substrates?
Ruge Quhe, Yakun Yuan, Jiaxin Zheng +6
Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calcula…