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20042021
most citedGiant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires

452 citations · 2.2k across the 46 of their papers we have counts for

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Showing 2015Show all

6 papers · 1 filter

cond-mat.mtrl-sci2015★ 41 cited

Electrical transport in nano-thick ZrTe sheets: from three to two dimensions

Jingjing Niu, Jingyue Wang, Zhijie He +7

ZrTe is a newly discovered topological material. Shortly after a single layer ZrTe had been predicted to be a two-dimensional topological insulator, a handful of experiment…

cond-mat.mes-hall2015★ 169 cited

Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires

Li-Xian Wang, Cai-Zhen Li, Da-Peng Yu +1

Three-dimensional Dirac semimetals, a three-dimensional analogue of graphene, are unusual quantum materials with massless Dirac fermions, which can be further converted to Weyl fer…

cond-mat.mes-hall2015★ 3 cited

Monolayer Phosphorene-Metal Interfaces

Yuanyuan Pan, Yangyang Wang, Meng Ye +9

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…

cond-mat.mtrl-sci2015★ 1 cited

Silicene Spintronics

Yangyang Wang, Ruge Quhe, Dapeng Yu +2

Spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate n…

cond-mat.mes-hall2015★ 452 cited

Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires

Cai-Zhen Li, Li-Xian Wang, Haiwen Liu +3

Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal…

cond-mat.mes-hall2015★ 37 cited

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Liang Zhang, Yuan Yan, Han-Chun Wu +2

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac material…