63 citations · 759 across the 53 of their papers we have counts for
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Comment on "Mn Interstitial Diffusion in (Ga,Mn)As"
M. Adell, J. Kanski, L. Ilver +2
The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion…
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
V. Osinniy, K. Dybko, A. Jedrzejczak +8
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06…
Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As
T. Figielski, T. Wosinski, O. Pelya +6
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak…
Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +10
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, wh…
MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +5
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in si…
Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
M. Adell, V. Stanciu, J. Kanski +7
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in…