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20012022
most citedInfluence of defects on the lattice constant of GaMnAs

63 citations · 759 across the 53 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2012★ 2 cited

Interval identification of FMR parameters for spin reorientation transition in (Ga,Mn)As

M. W. Gutowski, W. Stefanowicz, O. Proselkov +3

In this work we report results of ferromagnetic resonance studies of a 6% 15 nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane ori…

cond-mat.mes-hall2010★ 35 cited

Semiconductor quantum ring as a solid-state spin qubit

Elzbieta Zipper, Marcin Kurpas, Janusz Sadowski +1

The implementation of a spin qubit in a quantum ring occupied by one or a few electrons is proposed. Quantum bit involves the Zeeman sublevels of the highest occupied orbital. Such…

cond-mat.mes-hall2009★ 15 cited

Transport through (Ga,Mn)As nanoislands: Coulomb-blockade and temperature dependence of the conductance

Markus Schlapps, Teresa Lermer, Stefan Geissler +5

We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic fiel…

cond-mat.mes-hall2007★ 20 cited

Electron-electron interaction in 2D and 1D ferromagnetic (Ga,Mn)As

Daniel Neumaier, Markus Schlapps, Ursula Wurstbauer +4

We investigated the magnetotransport in high quality ferromagnetic (Ga,Mn)As films and wires. At low temperature the conductivity decreases with decreasing temperature without satu…

cond-mat.mes-hall2006★ 26 cited

All-electrical measurement of spin injection in a magnetic - junction diode

Peifeng Chen, Juergen Moser, Philipp Kotissek +4

Magnetic - junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by drivin…