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Realization of an Interacting Two-Valley AlAs Bilayer System
K. Vakili, Y. P. Shkolnikov, E. Tutuc +2
By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different…
Layer charge instability in unbalanced bilayer systems in the quantum Hall regime
E. Tutuc, R. Pillarisetty, S. Melinte +2
Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minor…
Critical Resistance of the Quantum Hall Ferromagnet in AlAs 2D Electrons
E. P. De Poortere, E. Tutuc, M. Shayegan
Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at m…
Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields
E. Tutuc, S. Melinte, E. P. De Poortere +2
We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/Al…