U. Singisetti

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cond-mat.mtrl-sci2026

Enhancement-Mode Vertical $β$ -Ga $_{2}$ O $_{3}$ U-Trench MOSFET with MOCVD Regrown n $^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Walid Amir, Jiawei Liu, Surajit Chakraborty +4

In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n $^{+}$ layers is demonstrated for enhancement-mode vertical $β$ -Ga $_{2}$ O $_{3}$ U…

cond-mat.mtrl-sci2026

Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax

Noor Jahan Nipu, Chinmoy Nath Saha, Uttam Singisetti

We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabric…

cond-mat.mtrl-sci2025

High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz

Chinmoy Nath Saha, Noor Jahan Nipu, Uttam Singisetti

This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degen…

Enhancement-Mode Vertical β-Ga2​O3​ U-Trench MOSFET with MOCVD Regrown n+ Contact Layers and Nitrogen-Implanted Current Blocking Layer

Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax

High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz

Enhancement-Mode Vertical $β$ -Ga $_{2}$ O $_{3}$ U-Trench MOSFET with MOCVD Regrown n $^{+}$ Contact Layers and Nitrogen-Implanted Current Blocking Layer