5 papers
Enhancement-Mode Vertical -GaO U-Trench MOSFET with MOCVD Regrown n Contact Layers and Nitrogen-Implanted Current Blocking Layer
Walid Amir, Jiawei Liu, Surajit Chakraborty +4
In this work, an implantation-free ohmic contact technology based on selectively MOCVD-regrown Si-doped n layers is demonstrated for enhancement-mode vertical -GaO U…
Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax
Noor Jahan Nipu, Chinmoy Nath Saha, Uttam Singisetti
We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabric…
Neutron-Assisted Breakdown Enhancement in -GaO Schottky Diodes
Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic +6
This study demonstrates a substantial enhancement of breakdown voltage in -GaO Schottky diodes through an approach that combines fast neutron irradiation with controlle…
High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz
Chinmoy Nath Saha, Noor Jahan Nipu, Uttam Singisetti
This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degen…
Radiation Resilience of -GaO Schottky Barrier Diodes Under High Dose Gamma Radiation
Saleh Ahmed Khan, Sudipto Saha, Uttam Singisetti +1
A systematic investigation of the electrical characteristics of \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) has been conducted under high-dose 60Co gamma radiation, with total cum…