78 citations · 152 across the 10 of their papers we have counts for
8 papers · 1 filter
Orthogonal and Non-Orthogonal Tight Binding parameters for III-V Semiconductors Nitrides
A. S. Martins, C. E. Fellows
A simulated annealing (SA) approach is employed in the determination of different tight binding (TB) sets of parameters for the nitride semiconductors AlN, GaN and InN, as well the…
Comment on article "Line of Dirac Nodes in Hyperhoneycomb Lattices"
Marcos Veríssimo-Alves, Rodrigo G. Amorim, A. S. Martins
Recently, carbon hyperhoneycomb (-n) lattices have been proposed to be, through a one- orbital tight-binding (TB) model with nearest-neighbor (n.n.) hopping, a fami…
Energy of Ni/NiAl Interface: a Temperature-Dependent Theoretical Study
A. S. Martins, M. F. de Campos
Using plane wave {\textit{ab-initio}} and Monte Carlo techniques, the Ni/NiAl interfacial energy is studied and the results from the different techniques are critically compa…
An Extended Hückel Study of the Electronic Properties of III-V Compounds and Their Alloys
Ingrid A. Ribeiro, Fabio J. Ribeiro, A. S. Martins
In this work, we performed tight binding calculations of the electronic structure of III-V semiconductors compounds and their alloys based on the Extended Hückel Theory (EHT), wher…
Conduction band tight-binding description for silicon applied to phosphorous donors
A. S. Martins, Timothy B. Boykin, Gerhard Klimeck +1
A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented…
Silicon-based spin and charge quantum computation
Belita Koiller, Xuedong Hu, R. B. Capaz +2
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resour…