An Extended Hückel Study of the Electronic Properties of III-V Compounds and Their Alloys
arXiv:1402.1610 · doi:10.1016/j.ssc.2014.01.028
Abstract
In this work, we performed tight binding calculations of the electronic structure of III-V semiconductors compounds and their alloys based on the Extended Hückel Theory (EHT), where the Hückel parameters for the binary compounds were generated following a simulated annealing procedure. In particular, this article is focused on the dependency between band gap and the applied pressure and also the alloy composition.
Article submitted to Solid State Commmunications