51 citations · 65 across the 4 of their papers we have counts for
6 papers
Sub-5-nm Ultra-thin InO Transistors for High-Performance and Low-Power Electronic Applications
Linqiang Xu, Lianqiang Xu, Jun Lan +7
Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…
Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li +7
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…
Silicene Nanomesh
Feng Pan, Yangyang Wang, Kaili Jiang +8
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal tha…
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
Hongxia Zhong, Zeyuan Ni, Yangyang Wang +8
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal…
Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry
Zhigang Song, Ruge Quhe, Yan Li +3
In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M = Mo, W; X = S, Se…
Does the Dirac Cone Exist in Silicene on Metal Substrates?
Ruge Quhe, Yakun Yuan, Jiaxin Zheng +6
Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calcula…