178 citations · 518 across the 11 of their papers we have counts for
11 papers
Giant topological Hall effect in correlated oxide thin films
Lorenzo Vistoli, Wenbo Wang, Anke Sander +15
Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-lineari…
Factors limiting ferroelectric field-effect doping in complex-oxide heterostructures
L. Bégon-Lours, V. Rouco, Qiao Qiao +12
Ferroelectric field-effect doping has emerged as a powerful approach to manipulate the ground state of correlated oxides, opening the door to a new class of field-effect devices. H…
Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature
Paolo Perna, Davide Maccariello, Fernando Ajejas +6
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic…
Switchable and tunable Rashba-type spin splitting in covalent perovskite oxides
Julien Varignon, Jacobo Santamaria, Manuel Bibes
In transition metal perovskites (ABO3) most physical properties are tunable by structural parameters such as the rotation of the BO6 octahedra. Examples include the Néel temperatur…
Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers
D. C. Vaz, E. Lesne, H. Naganuma +4
The quasi 2D electron system (q2DES) that forms at the interface between LaAlO3 and SrTiO3 has attracted much attention from the oxide electronics community. One of its hallmark fe…
High On/Off Ratio Memristive Switching of Manganite-Cuprate Bilayer by Interfacial Magnetoelectricity
Xiao Shen, Timothy J. Pennycook, David Hernandez-Martin +7
Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing…