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High quality GaMnAs films grown with As dimers
RP Campion, KW Edmonds, LX Zhao +4
We demonstrate that GaMnAs films grown with As2 have excellent structural, electrical and magnetic properties, comparable or better than similar films grown with As4. Using As2, a…
Anisotropic Magnetoresistance in GaMnAs films
K. Y. Wang, K. W. Edmonds, R. P. Campion +5
The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The aniso…
High Curie temperature GaMnAs obtained by resistance-monitored annealing
K. W. Edmonds, K. Y. Wang, R. P. Campion +4
We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Cu…
Magnetoresistance and Hall Effect in the Ferromagnetic Semiconductor GaMnAs
K W Edmonds, R P Campion, K-Y Wang +4
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic…
The Hall effect and hole densities in high Tc GaMnAs thin films
K. W. Edmonds, K. Y. Wang, R. P. Campion +4
By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained ove…