activity
20022022
most citedThree-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

160 citations · 523 across the 9 of their papers we have counts for

collaborators
Showing 2003Show all

1 paper · 1 filter

cond-mat.mtrl-sci2003★ 35 cited

High-Temperature Hall Effect in Ga(1-x)Mn(x)As

D. Ruzmetov, J. Scherschligt, David V. Baxter +6

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coeffi…