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20022022
most citedThree-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

160 citations · 523 across the 9 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mtrl-sci2022★ 19 cited

Unidirectional domain growth of hexagonal boron nitride thin films

Abhijit Biswas, Qiyuan Ruan, Frank Lee +16

Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morp…

cond-mat.mtrl-sci2010

The dynamics of magnetic vortex states in a single permalloy nanoparticle

Dmitry Ruzmetov, Venkat Chandrasekhar

We demonstrate a novel method allowing the study of the magnetic state dynamics of a single nanoparticle by means of electron transport measurements. Elliptical 550 nm x 240 nm per…

cond-mat.mtrl-sci2010★ 155 cited

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Dmitry Ruzmetov, Don Heiman, Bruce B. Claflin +2

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (…

cond-mat.mtrl-sci2010★ 160 cited

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Dmitry Ruzmetov, Gokul Gopalakrishnan, Changhyun Ko +2

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of par…

cond-mat.mtrl-sci2005

Epitaxial magnetic perovskite nanostructures

Dmitry Ruzmetov, Yongho Seo, Land J. Belenky +7

Precise arrays of sub-100 nm diameter nanodots are fabricated from magnetic oxide perovskites with the total coverage area up to 5 mm2. Epitaxial single crystal structure of the na…

cond-mat.mtrl-sci2003★ 35 cited

High-Temperature Hall Effect in Ga(1-x)Mn(x)As

D. Ruzmetov, J. Scherschligt, David V. Baxter +6

The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coeffi…

cond-mat.mtrl-sci2002★ 116 cited

Anisotropic Magnetoresistance in GaMnAs

David V. Baxter, Dmitry Ruzmetov, Julia Scherschligt +4

We have measured the magnetoresistance in a series of GaMnAs samples with 0.033 0.053 for three mutually orthogonal orientations of the applied magnetic fiel…