79 citations · 98 across the 4 of their papers we have counts for
3 papers · 1 filter
Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
Mohammad Rashidi, Erika Lloyd, Taleana R. Huff +4
We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electron…
All-Electronic Nanosecond-Resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Mohammad Rashidi, Wyatt Vine, Jacob A. J. Burgess +5
The miniaturization of semiconductor devices to the scales where small numbers of dopants can control device properties requires the development of new techniques capable of charac…
Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface
Taleana Huff, Hatem Labidi, Mohammad Rashidi +4
We report the mechanically induced formation of a silicon-hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a non-cont…