activity
20032023
most citedElectronic transport in two dimensional graphene

3.5k citations · 6k across the 52 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

33 papers · 1 filter

cond-mat.mes-hall2023★ 1 cited

Effect of Inversion Asymmetry on Bilayer Graphene's Superconducting and Exciton Condensates

Xiang Hu, Enrico Rossi, Yafis Barlas

Inversion asymmetry in bilayer graphene can be tuned by the displacement field. As a result, the band dispersion in biased bilayer graphene acquires flat band regions near the Dira…

cond-mat.mes-hall2022★ 4 cited

Kondo Effect in Defect-bound Quantum Dots Coupled to NbSe

T. R. Devidas, Tom Dvir, Enrico Rossi +1

We report the fabrication of a van der Waals tunneling device hosting a defect-bound quantum dot coupled to NbSe. We find that upon application of magnetic field, the device ex…

cond-mat.mes-hall2021★ 47 cited

Induced superconducting pairing in integer quantum Hall edge states

Mehdi Hatefipour, Joseph J. Cuozzo, Jesse Kanter +5

Indium Arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybrid…

cond-mat.mes-hall2020★ 42 cited

Quantum-metric-enabled exciton condensate in double twisted bilayer graphene

Xiang Hu, Timo Hyart, Dmitry I. Pikulin +1

Flat-band systems are a promising platform for realizing exotic collective ground states with spontaneously broken symmetry because the electron-electron interactions dominate over…

cond-mat.mes-hall2020★ 77 cited

Missing Shapiro steps in topologically trivial Josephson Junction on InAs quantum well

Matthieu C. Dartiailh, Joseph J. Cuozzo, William Mayer +4

Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4 periodic current phase relation. The experimental consequence of this periodicity is the disappe…

cond-mat.mes-hall2019★ 12 cited

Proximity induced spin-orbit splitting in graphene nanoribbons on transition metal dichalcogenides

Yohanes S. Gani, Eric J. Walter, Enrico Rossi

We study the electronic structure of heterostructures formed by a graphene nanoribbon (GNR) and a transition metal dichalcogenides (TMD) monolayer using first-principles. We consid…

cond-mat.mes-hall2019★ 24 cited

Van der Waals heterostructures with spin-orbit coupling

Enrico Rossi, Christopher Triola

In this article we review recent work on van der Waals (vdW) systems in which at least one of the components has strong spin-orbit coupling. We focus on a selection of vdW heterost…

cond-mat.mes-hall2019★ 152 cited

Gate Controlled Anomalous Phase Shift in Al/InAs Josephson Junctions

William Mayer, Matthieu C. Dartiailh, Joseph Yuan +3

In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal sy…

cond-mat.mes-hall2019★ 3 cited

Spin-charge coupled transport in van der Waals systems with random tunneling

M. Rodriguez-Vega, G. Schwiete, Enrico Rossi

We study the electron and spin transport in a van der Waals system formed by one layer with strong spin-orbit coupling and a second layer without spin-orbit coupling, in the regime…

cond-mat.mes-hall2019★ 26 cited

Superconductivity in twisted Graphene heterostructures

Yohanes S. Gani, Hadar Steinberg, Enrico Rossi

We study the low-energy electronic structure of heterostructures formed by one sheet of graphene placed on a monolayer of . We build a continuous low-energy effective…

cond-mat.mes-hall2019★ 113 cited

Second-order Dirac superconductors and magnetic field induced Majorana hinge modes

Sayed Ali Akbar Ghorashi, Xiang Hu, Taylor L. Hughes +1

We identify three-dimensional higher-order superconductors characterized by the coexistence of one-dimensional Majorana hinge states and gapless surface sates. We show how such sup…

cond-mat.mes-hall2018★ 13 cited

Electronic structure of graphene-nanoribbons on hexagonal boron nitride

Yohanes S. Gani, D. S. L. Abergel, Enrico Rossi

Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low dens…

cond-mat.mes-hall2018★ 134 cited

Effects of gate-induced electric fields on semiconductor Majorana nanowires

Andrey E. Antipov, Arno Bargerbos, Georg W. Winkler +3

We study the effect of gate-induced electric fields on the properties of semiconductor-superconductor hybrid nanowires which represent a promising platform for realizing topologica…

cond-mat.mes-hall2017★ 20 cited

Impurity-induced states in superconducting heterostructures

Dong E. Liu, Enrico Rossi, Roman M. Lutchyn

Heterostructures allow the realization of electronic states that are difficult to obtain in isolated systems. Exemplary is the case of quasi-one-dimensional heterostructures formed…

cond-mat.mes-hall2016★ 67 cited

Giant Edelstein effect in Topological-Insulator--Graphene heterostructures

M. Rodriguez-Vega, G. Schwiete, J. Sinova +1

The control of a ferromagnet's magnetization via only electric currents requires the efficient generation of current-driven spin-torques. In magnetic structures based on topologica…

cond-mat.mes-hall2015★ 42 cited

Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy

Chih-Pin Lu, Martin Rodriguez-Vega, Guohong Li +5

One-atom thick crystalline layers and their vertical heterostructures carry the promise of designer electronic materials that are unattainable by standard growth techniques. In ord…

cond-mat.mes-hall2014★ 48 cited

Kondo effect and non-Fermi liquid behavior in Dirac and Weyl semimetals

Alessandro Principi, Giovanni Vignale, Enrico Rossi

We study the Kondo effect in three-dimensional (3D) Dirac materials and Weyl semimetals. We find the scaling of the Kondo temperature with respect to the doping and the couplin…

cond-mat.mes-hall2014★ 29 cited

Ground state of graphene heterostructures in the presence of random charged impurities

Martin Rodriguez-Vega, Jonathan Fischer, S. Das Sarma +1

We study the effect of long-range disorder created by charge impurities on the carrier density distribution of graphene-based heterostructures. We consider heterostructures formed…

cond-mat.mes-hall2013★ 39 cited

Interlayer excitonic superfluidity in graphene

D. S. L. Abergel, M. Rodriguez-Vega, Enrico Rossi +1

We discuss the conditions under which the predicted (but not yet observed) zero-field interlayer excitonic condensation in double layer graphene has a critical temperature high eno…

cond-mat.mes-hall2012★ 33 cited

Two-dimensional electronic transport on the surface of 3D topological insulators

Qiuzi Li, E. Rossi, S. Das Sarma

We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scatteri…

cond-mat.mes-hall2012★ 25 cited

Screening and collective modes in gapped bilayer graphene

C. Triola, E. Rossi

We study the static and dynamic screening of gapped bilayer graphene. Unlike previous works we use the 4-band model instead of the simplified 2-band model. We find that there are i…

cond-mat.mes-hall2012★ 6 cited

Inhomogeneity and nonlinear screening in gapped bilayer graphene

D. S. L. Abergel, E. Rossi, S. Das Sarma

We demonstrate that for gapped bilayer graphene, the nonlinear nature of the screening of an external disorder potential and the resulting inhomogeneity of the electron liquid are…

cond-mat.mes-hall2012★ 26 cited

Effect of charged impurity correlation on transport in monolayer and bilayer graphene

Qiuzi Li, E. H. Hwang, E. Rossi

We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular…

cond-mat.mes-hall2010★ 3.5k cited

Electronic transport in two dimensional graphene

S. Das Sarma, Shaffique Adam, E. H. Hwang +1

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gate…