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Engineering the structural and electronic phases of MoTe2 through W substitution
D. Rhodes, D. A. Chenet, B. E. Janicek +30
MoTe is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic phase, the semimetallic $1T^{\pri…
Metal to insulator quantum-phase transition in few-layered ReS
Nihar R. Pradhan, Amber McCreary, Daniel Rhodes +11
In ReS a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS crystallizes in the 1T-structure which l…
Two-Dimensional Material Nanophotonics
Fengnian Xia, Han Wang, Di Xiao +2
The emerging two-dimensional (2D) materials exhibit a wide range of electronic properties, ranging from insulating hexagonal boron nitride, semiconducting transition metal dichalco…
Black Phosphorus Radio-Frequency Transistors
Han Wang, Xiaomu Wang, Fengnian Xia +6
Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoe…
Temperature-dependent Phonon Shifts in Monolayer MoS2
Nicholas Lanzillo, A. Glen Birdwell, Matin Amani +9
We present a combined experimental and computational study of two-dimensional molybdenum disulfde (MoS2) and the effect of temperature on the frequency shifts of the Raman-active E…
Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang, Lili Yu, Yi-Hsien Lee +7
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allow…