113 citations · 234 across the 16 of their papers we have counts for
3 papers · 2 filters
A route for the top-down fabrication of ordered ultrathin GaN nanowires
Miriam Oliva, Vladimir Kaganer, Maximilian Pudelski +5
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fab…
X-ray scattering study of GaN nanowires grown on Ti/AlO by molecular beam epitaxy
Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese +5
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on AlO are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scatteri…
Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed InGaN layers by scanning X-ray diffraction microscopy
Carsten Richter, Vladimir M. Kaganer, Armelle Even +5
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devi…