106 citations · 423 across the 10 of their papers we have counts for
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cond-mat.mtrl-sci2011★ 29 cited
Interface Structure of Graphene on SiC(000-1)
N. Srivastava, Guowei He, Luxmi +1
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interfa…
cond-mat.mtrl-sci2011★ 58 cited
Graphene formed on SiC under various environments: Comparison of Si-face and C-face
N. Srivastava, Guowei He, Luxmi +3
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atom…