106 citations · 423 across the 10 of their papers we have counts for
10 papers
Formation of a Buffer Layer for Graphene on C-face SiC{0001}
Guowei He, N. Srivastava, R. M. Feenstra
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in a Si-rich environment are studied using low-energy electron diffraction (LEED) and…
Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates
N. Srivastava, Qin Gao, M. Widom +4
The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electro…
Low-energy Electron Reflectivity from Graphene
R. M. Feenstra, N. Srivastava, Qin Gao +6
Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy…
Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
Guowei He, N. Srivastava, R. M. Feenstra
The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interfac…
Interface Structure of Graphene on SiC(000-1)
N. Srivastava, Guowei He, Luxmi +1
Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interfa…
Graphene formed on SiC under various environments: Comparison of Si-face and C-face
N. Srivastava, Guowei He, Luxmi +3
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atom…
Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
Luxmi, N. Srivastava, Guowei He +1
The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is…
Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments
Luxmi, N. Srivastava, R. M. Feenstra +1
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectr…
Thickness monitoring of graphene on SiC using low-energy electron diffraction
P. J. Fisher, Luxmi, N. Srivastava +2
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the g…
Morphology of Graphene on SiC(000-1) Surfaces
Luxmi, P. J. Fisher, N. Srivastava +5
Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger ele…