106 citations · 423 across the 10 of their papers we have counts for
Showing 2010Show all
3 papers · 1 filter
cond-mat.mtrl-sci2010★ 106 cited
Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
Luxmi, N. Srivastava, Guowei He +1
The morphology of graphene formed on the (000-1) surface (the C-face) and the (0001) surface (the Si-face) of SiC, by annealing in ultra-high vacuum or in an argon environment, is…
cond-mat.mtrl-sci2010★ 29 cited
Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments
Luxmi, N. Srivastava, R. M. Feenstra +1
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectr…
cond-mat.mtrl-sci2010
Thickness monitoring of graphene on SiC using low-energy electron diffraction
P. J. Fisher, Luxmi, N. Srivastava +2
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the g…