activity
20112026
most citedA new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

384 citations · 2.5k across the 63 of their papers we have counts for

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Showing 2014Show all

8 papers · 1 filter

cond-mat.mes-hall2014★ 107 cited

Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers

André Dankert, M. Venkata Kamalakar, Abdul Wajid +2

The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nat…

cond-mat.mes-hall2014★ 154 cited

Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators

André Dankert, Johannes Geurs, M. Venkata Kamalakar +1

Topological insulators (TIs) are a new class of quantum materials that exhibit spin momentum locking (SML) of massless Dirac fermions in the surface states. Usually optical methods…

cond-mat.mes-hall2014★ 6 cited

Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications

M. Venkata Kamalakar, B. N Madhushankar, André Dankert +1

Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior…

cond-mat.mes-hall2014

Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

M. Venkata Kamalakar, André Dankert, Johan Bergsten +2

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron n…

cond-mat.mtrl-sci2014★ 40 cited

Spin Transport and Precession in Graphene measured by Nonlocal and Three-Terminal Methods

André Dankert, Mutta Venkata Kamalakar, Johan Bergsten +1

We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusio…

cond-mat.mtrl-sci2014★ 11 cited

Thermal Creation of Electron Spin Polarization in n-Type Silicon

André Dankert, Saroj P. Dash

Conversion of heat into a spin-current in electron doped silicon can offer a promising path for spin-caloritronics. Here we create an electron spin polarization in the conduction b…