384 citations · 2.5k across the 63 of their papers we have counts for
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Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers
André Dankert, M. Venkata Kamalakar, Abdul Wajid +2
The two-dimensional atomically thin insulator hexagonal boron nitride (h-BN) constitutes a new paradigm in tunnel based devices. A large band gap along with its atomically flat nat…
Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
André Dankert, Johannes Geurs, M. Venkata Kamalakar +1
Topological insulators (TIs) are a new class of quantum materials that exhibit spin momentum locking (SML) of massless Dirac fermions in the surface states. Usually optical methods…
Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications
M. Venkata Kamalakar, B. N Madhushankar, André Dankert +1
Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior…
Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride
M. Venkata Kamalakar, André Dankert, Johan Bergsten +2
The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron n…
Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2
Anand P. S. Gaur, Satyaprakash Sahoo, Majid Ahmadi +3
MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-elect…