87 citations · 555 across the 37 of their papers we have counts for
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cond-mat.mes-hall2016
Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications
R. Islam, M. M. Uddin, M. Mofazzal Hossain +3
The design of a 1 micrometer gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al2O3 gate dielectric has been optimized using a quantu…
cond-mat.mes-hall2013★ 14 cited
Gate depletion of an InSb two-dimensional electron gas
M. M. Uddin, H. W. Liu, K. F. Yang +6
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surfac…
cond-mat.mes-hall2012★ 15 cited
Characterization of InSb quantum wells with atomic layer deposited gate dielectrics
M. M. Uddin, H. W. Liu, K. F. Yang +4
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance…