217 citations · 947 across the 12 of their papers we have counts for
7 papers · 1 filter
Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence
Kathleen M. McCreary, Aubrey T. Hanbicki, Glenn G. Jernigan +2
Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on e…
Electronic Hybridization of Large-Area Stacked Graphene Films
Jeremy T. Robinson, Scott W. Schmucker, C. Bogdan Diaconescu +5
Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies…
Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson +10
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramaticall…
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson +11
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of…
Epitaxial Graphene Growth on SiC Wafers
D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…
Graphene formation on SiC substrates
Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…
Characterization of one-dimensional quantum channels in InAs/AlSb
C. H. Yang, M. J. Yang, K. A. Cheng +1
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofab…