103 citations · 227 across the 9 of their papers we have counts for
9 papers
Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication
E. M. Anderson, C. R. Allemang, A. J. Leenheer +13
Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic re…
Suppression of mid-infrared plasma resonance due to quantum confinement in delta-doped silicon
Steve M. Young, Aaron M. Katzenmeyer, Evan M. Anderson +5
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum…
Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures
Connor Halsey, Jessica Depoy, DeAnna M. Campbell +7
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale…
A model for atomic precision p-type doping with diborane on Si(100)-21
Quinn Campbell, Jeffrey A. Ivie, Ezra Bussmann +3
Diborane (BH) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {Š}kere{ň}, \textit{et…
Atomic Precision Advanced Manufacturing for Digital Electronics
Daniel R. Ward, Scott W. Schmucker, Evan M. Anderson +8
An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex to…
Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices
Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer +8
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics.…