UV/Near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction

Swanand V. Solanke, Rohith Soman, Muralidharan Rangarajan +2

In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating α-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOC…