274 citations · 1.3k across the 28 of their papers we have counts for
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Investigation of Ta2O5 as an alternative high \k{appa} dielectric for InAlN/GaN MOS HEMT on Si
Sandeep Kumar, Himanshu Kumar, Sandeep Vura +6
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputte…
Multi-layer MoS2/GaN UV-Visible photodetector with observation of MoS2 band edge in spectral responsivity
Swanand Solanke, Shashwat Rathakanthiwar, 1Anisha Kalra +3
We report on the demonstration of MoS2/GaN UV-visible photodetectors with high spectral responsivity both in UV and in visible regions as well as the observation of MoS2 band-edge…
A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors
Sandeep Kumar, Anamika Singh Pratiyush, Rangarajan Muralidharan +1
In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF)…
MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector
Anamika Singh Pratiyush, Sriram Krishnamoorthy, Sandeep Kumar +4
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-…