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cond-mat.mes-hall2012★ 1.7k cited
Integrated Circuits Based on Bilayer MoS2 Transistors
Han Wang, Lili Yu, Yi-Hsien Lee +7
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allow…
cond-mat.mes-hall2011★ 33 cited
Delay Analysis of Graphene Field-Effect Transistors
Han Wang, Allen Hsu, Dong Seup Lee +3
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with…
cond-mat.mes-hall2011★ 195 cited
BN/Graphene/BN Transistors for RF Applications
Han Wang, Thiti Taychatanapat, Allen Hsu +4
In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even w…