57 citations · 181 across the 10 of their papers we have counts for
9 papers · 1 filter
Effect of increased DCR on the detection of minimum-ionizing particles with SiPMs
Katjana Neumann, Massimiliano Antonello, Lukas Brinkmann +2
Radiation damage to a Silicon Photomultiplier (SiPM), as it occurs during the lifetime of the planned CMS high-granularity calorimeter detector, increases the dark current and degr…
Megapixels @ Megahertz -- The AGIPD High-Speed Cameras for the European XFEL
Ulrich Trunk, Aschkan Allahgholi, Julian Becker +23
The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside t…
Detector Technologies for CLIC
A. C. Abusleme Hoffman, G. Parès, T. Fritzsch +129
The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at…
Determination of the p-spray profile for n+p silicon sensors using a MOSFET
E. Fretwurst, E. Garutti, R. Klanner +3
The standard technique to electrically isolate the implants of segmented silicon sensors fabricated on high-ohmic -type silicon are -implants. Although the knowledge…
Study of the breakdown voltage of SiPMs
V. Chmill, E. Garutti, R. Klanner +2
The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 1515, 2525, 5050, and 100100 m, manufactured by KETEK, has…
The influence of edge effects on the determination of the doping profile of silicon pad diodes
M. Hufschmidt, E. Fretwurst, E. Garutti +3
Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different…
Impact of low-dose electron irradiation on n+p silicon strip sensors
The Tracker Group of the CMS Collaboration
The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were perfor…
Challenges for the Adaptive Gain Integrating Pixel Detector (AGIPD) design due to the high intensity photon radiation environment at the European XFEL
J. Becker, L. Bianco, P. Göttlicher +17
The European X-ray Free Electron Laser (XFEL) is a new research facility currently under construction in Hamburg, Germany. With a pulse length of less than 100 fs and an extremely…
Charge losses in segmented silicon sensors at the Si-SiO2 interface
Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +3
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interfa…