274 citations · 274 across the 2 of their papers we have counts for
3 papers
Radiative capture rates at deep defects from electronic structure calculations
Cyrus E. Dreyer, Audrius Alkauskas, John L. Lyons +1
We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattic…
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
Audrius Alkauskas, Cyrus E. Dreyer, John L. Lyons +1
Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of th…
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
Audrius Alkauskas, John L. Lyons, Daniel Steiauf +1
We present a theoretical study of broadening of defect luminescence bands due to vibronic coupling. Numerical proof is provided for the commonly used assumption that a multi-dimens…