274 citations · 274 across the 3 of their papers we have counts for
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Dark and Bright Excitons in Halide Perovskite Nanoplatelets
Moritz Gramlich, Michael W. Swift, Carola Lampe +5
Semiconductor nanoplatelets (NPLs), with their large exciton binding energy, narrow photoluminescence (PL), and absence of dielectric screening for photons emitted normal to the NP…
Radiative capture rates at deep defects from electronic structure calculations
Cyrus E. Dreyer, Audrius Alkauskas, John L. Lyons +1
We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattic…
Defect identification based on first-principles calculations for deep level transient spectroscopy
Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat +4
Deep level transient spectroscopy (DLTS) is used extensively to study defects in semiconductors. We demonstrate that great care should be exercised in interpreting activation energ…
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
Audrius Alkauskas, Cyrus E. Dreyer, John L. Lyons +1
Defect-assisted recombination is an important limitation on efficiency of optoelectronic devices. However, since nonradiative capture rates decrease exponentially with energy of th…
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
Audrius Alkauskas, John L. Lyons, Daniel Steiauf +1
We present a theoretical study of broadening of defect luminescence bands due to vibronic coupling. Numerical proof is provided for the commonly used assumption that a multi-dimens…