1k citations · 6.4k across the 62 of their papers we have counts for
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Non-stoichiometry and Defects in the Weyl Semimetals TaAs, TaP, NbP, and NbAs
Tiglet Besara, Daniel Rhodes, Kuan-Wen Chen +6
We report a structural study of the Weyl semimetals TaAs, TaP, NbP, and NbAs, utilizing diffraction techniques (single crystal x-ray diffraction and energy dispersive spectroscopy)…
Metal to insulator quantum-phase transition in few-layered ReS
Nihar R. Pradhan, Amber McCreary, Daniel Rhodes +11
In ReS a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS crystallizes in the 1T-structure which l…
Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe field-effect transistors
Nihar R. Pradhan, Zhengguang Lu, Daniel Rhodes +3
Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe field-effect transistors whose…
High Photoresponsivity and Short Photo Response Times in Few-Layered WSe Transistors
Nihar R. Pradhan, Jonathan Ludwig, Zhengguang Lu +6
Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe crystals mechanically exfoliated ont…
Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
Junjie Wang, Daniel Rhodes, Simin Feng +7
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides…
Hall and field-effect mobilities in few layered -WSe field-effect transistors
N. R. Pradhan, D. Rhodes, S. Memaran +9
Here, we present a temperature () dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe exfoliated onto SiO.…