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Electron Exchange Coupling for Single Donor Solid-State Qubits
C. J. Wellard, L. C. L. Hollenberg, F. Parisoli +4
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron sta…
Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
L. M. Kettle, H. S. Goan, Sean C. Smith +3
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide b…
Charge-based silicon quantum computer architectures using controlled single-ion implantation
A. S. Dzurak, L. C. L. Hollenberg, D. N. Jamieson +13
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qu…
Charge-based quantum computing using single donors in semiconductors
L. C. L. Hollenberg, A. S. Dzurak, C. Wellard +4
Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charg…