activity
20122014
most citedHigh Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

481 citations · 616 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2014★ 481 cited

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…

cond-mat.mtrl-sci2012★ 135 cited

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Ming-Wei Lin, Lezhang Liu, Qing Lan +6

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithiu…